2SB1204(2003) 查看數據表（PDF） - SANYO -> Panasonic

零件编号

产品描述 (功能)

生产厂家

2SB1204
(Rev.:2003)

High-Current Switching Applications

SANYO -> Panasonic 

2SB1204/2SD1804

( ) : 2SB1204

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Symbol

VCBO

VCEO

VEBO

IC

ICP

Collector Dissipation

PC

Junction Temperature

Tj

Storage Temperature

Tstg

Tc=25˚C

Conditions

Electrical Characteristics at Ta = 25˚C

Parameter

Symbol

Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

ICBO

IEBO

hFE1

hFE2

VCB=(–)40V, IE=0

VEB=(–)4V, IC=0

VCE=(–)2V, IC=(–)0.5A

VCE=(–)2V, IC=(–)6A

Gain-Bandwidth Product

fT

VCE=(–)5V, IC=(–)1A

Output Capacitance

Cob

VCB=(–)10V, f=1MHz

Collector-to-Emitter Saturation Voltage

VCE(sat) IC=(–)4A, IB=(–)0.2A

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

IC=(–)4A, IB=(–)0.2A

IC=(–)10μA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10μA, IC=0

See specified Test Circuit

Storage Time

tstg

See specified Test Circuit

Fall Time

tf

See specified Test Circuit

* : The 2SB1204/2SD1804 are classified by 0.5A hFE as follows :

Rank

hFE

Q

R

S

T

70 to 140 100 to 200 140 to 280 200 to 400

Switching Time Test Circuit

IB1

PW=20μs

D.C.≤1%

IB2

OUTPUT

INPUT

VR

RB

RL

50Ω

+

+

100μF

470μF

VBE= --5V

VCC=25V

IC=10IB1= --10IB2=4A

(For PNP, the polarity is reversed.)

Ratings

Unit

(–)60 V

(–)50 V

(–)6 V

(–)8 A

(–)12 A

1W

20 W

150 ˚C

–55 to +150 ˚C

Ratings

min

typ

70*

35

(130)

180

(95)65

200

(–250)

(–)0.95

(–)60

(–)50

(–)6

(50)

(450)

500

20

max

(–)1

(–)1

400*

400

(–500)

(–)1.3

Unit

μA

μA

MHz

MHz

pF

mV

mV

V

V

V

V

ns

ns

ns

ns

No.2086–2/5

Share Link: