N25Q256A83E1240G 查看數據表（PDF） - Micron Technology

零件编号

产品描述 (功能)

生产厂家

N25Q256A83E1240G

3V, 256Mb: Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB Sector Erase

Micron Technology 

3V, 256Mb: Multiple I/O Serial Flash Memory

Memory Organization

Memory Organization

Memory Configuration and Block Diagram

Each page of memory can be individually programmed. Bits are programmed from one

through zero. The device is subsector, sector, or bulk-erasable, but not page-erasable.

Bits are erased from zero through one. The memory is configured as 33,554,432 bytes (8

bits each); 512 sectors (64KB each); 8192 subsectors (4KB each); and 131,072 pages (256

bytes each); and 64 OTP bytes are located outside the main memory array.

Figure 5: Block Diagram

HOLD#

W#/VPP

S#

C

DQ0

DQ1

DQ2

DQ3

Control logic

Address register

and counter

High voltage

generator

64 OTP bytes

I/O shift register

256 byte

data buffer

Status

register

01FFFFFFh

PDF: 09005aef84566603

n25q_256mb_65nm.pdf - Rev. Q 05/13 EN

0000000h

00000FFh

256 bytes (page size)

X decoder

12

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2011 Micron Technology, Inc. All rights reserved.

Share Link: