N25Q256A83E1240G 查看數據表（PDF） - Micron Technology

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N25Q256A83E1240G

3V, 256Mb: Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB Sector Erase

Micron Technology 

3V, 256Mb: Multiple I/O Serial Flash Memory

Device Protection

Table 6: Protected Area Sizes – Lower Area (Continued)

Note 1 applies to the entire table

Status Register Content

Top/

Bottom

Bit

BP3

BP2

BP1

BP0

1

1

1

1

1

Memory Content

Protected Area

All sectors

Unprotected Area

None

Note: 1. See the Status Register for details on the top/bottom bit and the BP 3:0 bits.

PDF: 09005aef84566603

n25q_256mb_65nm.pdf - Rev. Q 05/13 EN

16

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