2N70-M 查看數據表（PDF） - Unisonic Technologies

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2N70-M

2 Amps, 700 Volts N-CHANNEL POWER MOSFET

Unisonic Technologies 

2N70-M

Preliminary

Power MOSFET

 ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS = 0V, ID = 250μA

700

V

Drain-Source Leakage Current

IDSS

VDS = 700V, VGS = 0V

VDS = 560V, VGS = 0V, TJ =125°С

10 μA

100 μA

Gate-Source Leakage Current

Forward

Reverse

IGSS

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

100 nA

-100 nA

Breakdown Voltage Temperature

Coefficient

△BVDSS/△TJ ID = 250 μA, Referenced to 25°C

0.4

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

VGS(TH)

RDS(ON)

VDS = VGS, ID = 250μA

VGS = 10V, ID =1A

2.0

4.0 V

5.4 6.3 Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS =25V, VGS =0V, f =1MHz

270 350 pF

38 50 pF

5 7 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

tD (ON)

tR

tD(OFF)

tF

QG

QGS

QGD

VDD =30V, ID =0.5A, RG=25Ω

(Note 1, 2)

VDS=560V, VGS=10V, ID=2.0A

(Note 1, 2)

35 40 ns

65 70 ns

105 115 ns

50 70 ns

17.2

nC

1.7

nC

4.4

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, ISD = 2.0 A

Continuous Drain-Source Current

ISD

Pulsed Drain-Source Current

ISM

Reverse Recovery Time

Reverse Recovery Charge

tRR

VGS = 0 V, ISD = 2.0A

QRR

di/dt = 100 A/μs (Note1)

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

1.4 V

2.0 A

8.0 A

260

ns

1.09

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-A53.b

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