MP02HBN130-16 查看數據表（PDF） - Dynex Semiconductor
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MP02HBN130-16 Datasheet PDF : 8 Pages
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MP02X130 Series
1000
Tj = 125˚C
800
600
400
200
0
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage, VT - (V)
Fig. 3 Maximum (limit) on-state characteristics
50
PGM = 16W
10
8
7
6
60
5
50
4
40
3
I2t
30
2
20
1
10
0
0
1
10 1 2 3 4 5
50
ms
cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time
(Thyristor or diode with 50% VRRM at Tcase = 125˚C)
0.3
Rth(j-hs)
0.2
Rth(j-c)
1
0.1
0.1
0.01
0.1
1
Gate current, IG - (A)
Fig. 5 Gate characteristics
4/8
0
10
0.001
0.010
0.100
1.0
10
100
Time - (s)
Fig. 6 Transient thermal impedance - dc
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