IRFAC30 查看數據表（PDF） - Inchange Semiconductor
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IRFAC30 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFAC30
FEATURES
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·High current ,high speed switching
·Switch mode power supplies
·DC-AC converters for welding equipment and
Uninterruptible power supplies and motor
Driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
V
±20
V
ID
Drain Current-Continuous
3.6
A
IDM
Drain Current-Single Pluse
14
A
PD
Total Dissipation @TC=25℃
74
W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX UNIT
1.67 ℃/W
30
℃/W
isc website：www.iscsemi.cn
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