MTD3302 查看數據表（PDF） - ON Semiconductor

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MTD3302

Power MOSFET 18 Amps, 30 Volts

ON Semiconductor 

MTD3302

TYPICAL ELECTRICAL CHARACTERISTICS

1000

DUTY CYCLE

100

D = 0.5

0.2

10

0.1

0.05

0.02

1

0.01

0.1

SINGLE PULSE

0.01

1E−05

1E−04

MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

RθJA(t) = r(t) RθJA

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TA = P(pk) RθJA(t)

1E−03

1E−02

1E−01

t, TIME (seconds)

1E+00

1E+01

1E+02

1E+03

Figure 14. Thermal Response − Various Duty Cycles

10,000

1000

100

10

MIN PAD, ja 1 INCH PAD, ja

R

C

R

C

1 0.0260 2.30 0.0256 0.753

2 0.384 36.2 0.314 9.97

3 25.0 1521 5.07 230

4 74.1 5000 19.6 1300

5 17.9 85,400 41.7 7,500

CASE MOUNT, jc

R

C

0.0324 0.0002

0.0487 0.0006

0.0896 0.0014

0.464 0.0073

0.666 0.0482

CHIP

JUNCTION

R1

C1

R2

C2

R3

R4

R5

C3

C4

C5

AMBIENT

Rthja, MIN PAD

Rthja, 1 INCH PAD

1

0.1

1E−05

1E−04

1E−03

1E−02

1E−01

t, TIME (seconds)

1E+00

Figure 15. Thermal Response − Various

Mounting/Measurement Conditions

1E+01

Rthjc, Tcase = 25°C

1E+02

1E+03

200

150

100

50

0

0.01

MOUNTED ON 2″ SQ. FR4 BOARD (1″ SQ.

2 OZ. CU 0.06″ THICK SINGLE SIDED)

0.1

1

t, TIME (seconds)

Figure 16. Single Pulse Power

di/dt

IS

trr

ta

tb

TIME

tp

0.25 IS

10

IS

Figure 17. Diode Reverse Recovery Waveform

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