2N6550 查看數據表（PDF） - InterFET
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2N6550 Datasheet PDF : 1 Pages
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01/99
B-27
2N6550
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA =25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuious Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Junction Temperature (Operating & Storage)
– 20 V
50 mA
400 mW
2.3 mW/°C
– 65°C to +200°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
V(BR)GSS
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current (Pulsed)
Gate Source Cutoff Voltage
IDSS
VGS(OFF)
Dynamic Electrical Characteristics
Transconductance
gfs
Common Source Output Conductance |Yos|
Common Source Input Capacitance
Ciss
Common Source Reverse Transfer Capacitance Crss
Equivalent Short Circuit
Input Noise Voltage
e¯N
e¯N Total
Equivalent Open Circuit Input Noise Current ¯iN
2N6550
Min Typ Max
– 20
–3
– 0.1
10 100 250
– 0.3
–3
Process NJ450L
Unit
Test Conditions
V IG = 10 µA, VDS = ØV
nA VGS = – 10V, VDS = ØV
µA VGS = – 10V, VDS = ØV
mA VDS = 10V, VGS = Ø V
V VDS = 10V, ID = 0.1 mA
TA = 85°C
25
150 mS VDS = 10V, ID = 10 mA
150 µS VDS = 10V, ID = 10 mA
30
35
pF VDS = 10V, ID = 10 mA
10
20
pF VDS = 10V, VDS = ØV
1.4
2 nV/√Hz VDS = 5V, ID = 10 mA
6
10 nV/√Hz VDS = 5V, ID = 10 mA
0.4
0.6 µVrms VDS = 5V, ID = 10 mA
0.1
pA/√Hz RS < 100 KΩ
f = 1 kHz
f = 1 kHz
f = 140 kHz
f = 140 kHz
f = 1 kHz
f = 10 Hz
f = 10 kHz
to 20 kHz
f = 1 kHz
TOÐ46 Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate & Case
www.interfet.com
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
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