BUK9535-55 查看數據表（PDF） - Philips Electronics
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BUK9535-55 Datasheet PDF : 8 Pages
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Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9535-55
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
±V(BR)GSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VDS = 55 V; VGS = 0 V;
Tj = 175˚C
VGS = ±5 V; VDS = 0 V
Tj = 175˚C
IG = ±1 mA;
VGS = 5 V; ID = 17 A
Tj = 175˚C
MIN.
55
50
1
0.5
-
-
-
-
-
10
TYP.
-
-
1.5
-
-
0.05
-
0.02
-
MAX.
-
-
2
-
2.3
10
500
1
10
-
UNIT
V
V
V
V
µA
µA
µA
µA
V
-
28 35 mΩ
-
-
74 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 15 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 15 A;
VGS = 5 V; RG = 10 Ω
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
12
-
-
-
-
-
-
-
-
TYP.
-
1050
205
110
14
77
55
48
3.5
MAX.
-
1400
245
150
21
110
80
65
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
4.5
-
nH
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 34 A; VGS = 0 V
trr
Reverse recovery time
IF = 34 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 30 V
MIN. TYP. MAX. UNIT
-
-
34
A
-
- 136 A
- 0.95 1.2 V
-
1.0
-
-
40
-
ns
- 0.16 -
µC
April 1998
2
Rev 1.100
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