BUK9535-55 查看數據表（PDF） - Philips Electronics
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BUK9535-55 Datasheet PDF : 8 Pages
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Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9535-55
100 VGS/V = 10
ID/A
8
7
80
60
40
20
0
0
2
4 VDS/V 6
6.4
6.0
5.8
5.6
5.4
5.2
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
8
10 2.4
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
45 RDS(ON)/mOhm
VGS/V =
40
35
30
4
4.2
4.4
4.6
4.8
5
25
0
Fig.6.
10
20
30 ID/A 40
50
60
Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
70
ID/A
60
50
40
30
20
10
Tj/C = 175
25
0
0
1
2
3 VGS/V 4
5
6
7
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
30
gfs/S
25
20
15
10
5
0
10
20
30 ID/A 40
50
60
70
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.5 a
BUK959-60 Rds(on) normlised to 25degC
2
1.5
1
0.5
-100
-50
0
50
100
150
200
Tmb / degC
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 17 A; VGS = 5 V
VGS(TO) / V
2.5
max.
2
typ.
1.5
min.
1
BUK959-60
0.5
0
-100
-50
0
50
Tj / C
100
150
200
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
April 1998
4
Rev 1.100
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