BUK9535-55 查看數據表（PDF） - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
BUK9535-55 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9535-55
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2%
typ
98%
1E-04
1E-05
1E-05
0
0.5
1
1.5
2
2.5
3
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
2.5
2.0
1.5
1.0
Ciss
0.5
0
0.01
0.1
1 VDS/V 10
Coss
Crss
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
6
VGS/V
5
4
3
VDS = 14V
VDS = 44V
2
1
0
0
5
10 QG/nC 15
20
25
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 30 A; parameter VDS
100
IF/A
80
60
Tj/C = 175
25
40
20
0
0
0.5
VSDS/V
1
1.5
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 32 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
April 1998
5
Rev 1.100
Share Link: 