BUK9535-100A 查看數據表（PDF） - NXP Semiconductors.

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BUK9535-100A

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

NXP Semiconductors

BUK9535-100A

N-channel TrenchMOS logic level FET

Table 1. Quick reference data …continued

Symbol Parameter

Conditions

Static characteristics

RDSon

drain-source

on-state

resistance

VGS = 4.5 V; ID = 25 A;

Tj = 25 °C

VGS = 10 V; ID = 25 A;

Tj = 25 °C

VGS = 5 V; ID = 25 A;

Tj = 25 °C; see Figure 12;

see Figure 13

Avalanche ruggedness

EDS(AL)S

non-repetitive

ID = 40 A; Vsup ≤ 100 V;

drain-source

RGS = 50 Ω; VGS = 5 V;

avalanche energy Tj(init) = 25 °C; unclamped

Min Typ Max Unit

-

-

39 mΩ

-

29 34 mΩ

-

30 35 mΩ

-

-

125 mJ

2. Pinning information

Table 2.

Pin

1

2

3

mb

Pinning information

Symbol Description

G

gate

D

drain

S

source

D

mounting base; connected to

drain

Simplified outline

mb

Graphic symbol

D

G

mbb076 S

3. Ordering information

123

SOT78A (TO-220AB)

Table 3. Ordering information

Type number

Package

Name

BUK9535-100A

TO-220AB

Description

plastic single-ended package; heatsink mounted;

1 mounting hole; 3-lead TO-220AB

Version

SOT78A

BUK9535-100A

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 9 February 2011

© NXP B.V. 2011. All rights reserved.

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