BUK9535-100A 查看數據表（PDF） - NXP Semiconductors.
零件编号
产品描述 (功能)
生产厂家
BUK9535-100A Datasheet PDF : 13 Pages
| |||
NXP Semiconductors
BUK9535-100A
N-channel TrenchMOS logic level FET
103
ID
(A)
102
RDSon = VDS / ID
10
P
1
tp
δ=
T
tp
t
T
10−1
1
D.C.
10
03nd14
tp = 10 μs
100 us
1 ms
10 ms
100 ms
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
vertical in still air
Min Typ Max Unit
-
-
1
K/W
-
60
-
K/W
10
Zth(j-mb)
(K/W)
03nd15
1
δ = 0.5
10−1
0.2
0.1
0.05
0.02
10−2
Single Shot
10−3
10−6
10−5
10−4
10−3
P
tp
δ=
T
10−2
tp
t
T
10−1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9535-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
Share Link: 