BUK9535-100A 查看數據表（PDF） - NXP Semiconductors.
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BUK9535-100A Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK9535-100A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 175 °C;
see Figure 12; see Figure 13
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 12; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 30 V; RL = 1.2 Ω; VGS = 5 V;
RG(ext) = 10 Ω; Tj = 25 °C
from drain lead 6 mm from package to
centre of die; Tj = 25 °C
from contact screw on mounting base to
centre of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
100 -
89 -
-
-
-
V
-
V
2.3 V
0.5 -
-
V
1
1.5 2
V
-
0.05 10 µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
-
88 mΩ
-
-
39 mΩ
-
29
34
mΩ
-
30
35
mΩ
-
2660 3573 pF
-
265 314 pF
-
170 220 pF
-
10
-
ns
-
62 -
ns
-
194 -
ns
-
108 -
ns
-
4.5 -
nH
-
3.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
68
-
ns
-
230 -
nC
BUK9535-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2011
© NXP B.V. 2011. All rights reserved.
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