BUK9535-100A 查看數據表（PDF） - NXP Semiconductors.
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BUK9535-100A Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK9535-100A
N-channel TrenchMOS logic level FET
160
ID
(A)
120
03nd11
VGS (V) = 10
5
4
80
3
40
2.2
0
0
2
4
6
8
10
VDS (V)
35
RDSon
(mΩ)
30
03nd10
25
20
2
4
6
8
10
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10-1
ID
(A)
10-2
10-3
10-4
10-5
10-6
0
03aa36
min
typ
max
1
2
3
VGS (V)
70
gfs
(S)
60
50
40
30
20
10
0
0
03nd08
20
40
60
80
100
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK9535-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2011
© NXP B.V. 2011. All rights reserved.
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