BUK9535-100A 查看數據表（PDF） - NXP Semiconductors.
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BUK9535-100A Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK9535-100A
N-channel TrenchMOS logic level FET
100
ID
(A)
80
60
40
20
0
0
03nd09
Tj = 175 °C
1
2
Tj = 25 °C
3
4
VGS (V)
5
VGS
(V)
4
3
2
1
0
0
03nd07
VDD = 14 V
VDD = 80 V
20
40
60
QG (nC)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source voltage as a function of gate
function of gate-source voltage; typical values
charge; typical values
2.5
VGS(th)
(V)
2
1.5
1
0.5
max
typ
min
03aa33
40
RDSon
(mΩ)
35
30
25
03nd12
VGS (V) = 3
3.2
3.4
3.6
3.8
4
5
0
-60
0
60
120
180
Tj (°C)
20
0
20
40
60
80
ID (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
BUK9535-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 February 2011
© NXP B.V. 2011. All rights reserved.
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