BUK9535-100A 查看數據表（PDF） - NXP Semiconductors.

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BUK9535-100A

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

NXP Semiconductors

3

03aa29

a

2

1

0

-60

0

60

120

180

Tj (°C)

BUK9535-100A

N-channel TrenchMOS logic level FET

7000

C

(pF)

6000 Ciss

5000

4000

3000

Coss

Crss

2000

1000

0

10−2

10−1

1

03nd13

10

102

VDS (V)

Fig 13. Normalized drain-source on-state resistance

factor as a function of junction temperature

Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

100

IS

(A)

80

60

40

03nd06

Tj = 175 °C

Tj = 25 °C

20

0

0

0.5

1.0

1.5

VSD (V)

Fig 15. Reverse diode current as a function of reverse diode voltage; typical values

BUK9535-100A

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 9 February 2011

© NXP B.V. 2011. All rights reserved.

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