Q68000-A3428 查看數據表（PDF） - Infineon Technologies

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Q68000-A3428

NPN Silicon AF Transistors

Infineon Technologies 

NPN Silicon AF Transistors

q High breakdown voltage

q Low collector-emitter saturation voltage

q Complementary types: SMBTA 55

SMBTA 56 (PNP)

SMBTA 05

SMBTA 06

Type

SMBTA 05

SMBTA 06

Marking

s1H

s1G

Ordering Code

(tape and reel)

Q68000-A3430

Q68000-A3428

Pin Configuration

1

2

3

B

E

C

Package1)

SOT-23

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current

Base current

Peak base current

Total power dissipation, TS = 79 ˚C

Junction temperature

Storage temperature range

Thermal Resistance

Junction - ambient2)

Junction - soldering point

Symbol

Values

SMBTA 05 SMBTA 06

VCE0

60

80

VCB0

60

80

VEB0

4

IC

500

ICM

1

IB

100

IBM

200

Ptot

330

Tj

150

Tstg

– 65 … + 150

Unit

V

mA

A

mA

mW

˚C

Rth JA

Rth JS

≤ 285

K/W

≤ 215

1) For detailed information see chapter Package Outlines.

2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

1

5.91

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