G2SB80 查看數據表（PDF） - Vishay Semiconductors
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G2SB80 Datasheet PDF : 4 Pages
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G2SB20, G2SB60 & G2SB80
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
G2SB20
G2SB60
Typical thermal resistance
RθJA
40
RθJC
12
Note:
(1) Unit mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
G2SB80
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
G2SB60-E3/45
2.045
45
G2SB60-E3/51
2.045
51
BASE QUANTITY
20
400
DELIVERY MODE
Tube
Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
2.0
P.C.B. Mounting, TA
1.5
1.0
0.5
0
0
25
50
75
100
125
150
Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
100
10
1
0.1
0.01
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
100
80
60
40
20
1.0 Cycle
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
TA = 125 °C
10
1
0.1
TA = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 88603
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 12-Feb-08
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