SWC1N60 查看數據表（PDF） - Xian Semipower Electronic Technology Co., Ltd.
零件编号
产品描述 (功能)
生产厂家
SWC1N60 Datasheet PDF : 6 Pages
| |||
SAMWIN
SW1N60D
N-channel I-PAK/TO-92 MOSFET
Features
TO-251
TO-92
■ High ruggedness
■ RDS(ON) (Max8.5Ω)@VGS=10V
■ Gate Charge (Typical 6.8 nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
1
2
3
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 600V
ID
: 1A
RDS(ON) :8.5Ω
2
1
3
Order Codes
Item
1
2
Sales Type
SW I 1N60
SW C 1N60
Marking
SW1N60D
SW1N60D
Package
TO-251
TO-92
Packaging
TUBE
TAPE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
TO-251
TO-92
600
1*
0.6*
4
± 30
68
8
5
65.9
4.2
0.53
0.03
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthjcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-251
TO-92
1.9
30.1
90
113.5
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 2.0
1/6
Share Link: 