NTE489 查看數據表（PDF） - NTE Electronics

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NTE489

Silicon P–Channel JFET Transistor General Purpose AF Amplifier

NTE Electronics 

NTE489

Silicon P–Channel JFET Transistor

General Purpose AF Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Gate–Drain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Gate–Source Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50mA

Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.27mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +135°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Lead Temperature (During Soldering, 1/16” from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +300°C

Note 1. Geometry is symmetrical. Units may be operated with source and drain leads interchanged.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Static Characteristics

Gate–Source Breakdown Voltage

Gate Reverse Current

Gate–Source Cutoff Voltage

Gate Current

Saturation Drain Current

Dynamic Characteristics

V(BR)GSS IG = 1µA, VDS = 0

30 –

–

V

IGSS VGS = 20V, VDS = 0, Note 2

– – 200 pA

VGS(off) ID = –1nA, VDS = –15V

0.5 – 2.0

V

IG

ID = –2mA, VDG = –15V, Note 2

– 15

–

pA

IDSS VDS = –15V, VGS = 0

–2 – –15 mA

Common–Source Forward

Transconductance

gfs VDS = –15V, VGS = 0, f = 1kHz, 6000 – 15000 µmho

Note 3

Common–Source Output Conductance

Common–Source Input Capacitance

Common–Source Reverse Transfer

Capaticance

gos VDS = –15V, VGS = 0, f = 1kHz

Ciss VDS = –15V, VGS = 0, f = 1MHz

Crss VDS = –15V, VGS = 0, f = 1MHz

– – 200 µmho

– 32 –

pF

–4

–

pF

Equivalent Short–Circuit Input Noise

Voltage

en VDS = –10V, ID = –2mA, f = 1kHz –

6

–

nV

pHz

Note 2. Approximately doubles for every 10°C increase in TA.

Note 3. Pulse test duration = 2ms.

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