2SA1930 查看數據表（PDF） - Inchange Semiconductor
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2SA1930 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1930
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A; IB=- 0.1A
VBE(on) Base-Emitter Voltage
IC= -1A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -180V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V ; IC= 0
hFE-1
DC Current Gain
IC= -0.1A ; VCE= -5V
hFE-2
DC Current Gain
IC= -1A ; VCE= -5V
Cob
Collector Output Capacitance
IE= 0 ; VCB= -10V,f=1MHz
fT
Current-Gain—Bandwidth Product IC= -0.3A ; VCE= -5V
MIN TYP. MAX UNIT
-180
V
-1.0
V
-1.5
V
-5
μA
-5
μA
100
320
50
16
pF
200
MHz
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