NTE490 查看數據表（PDF） - NTE Electronics
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NTE490 Datasheet PDF : 2 Pages
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NTE490
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Drain–Source Breakdown Voltage
Gate Reverse Current
ON Characteristics (Note 2)
V(BR)DSS VGS = 0, ID = 100µA
IGSS VGS = 15V, VDS = 0
Gate Threshold Voltage
Static Drain–Source ON Resistance
VGS(Th) VDS = VGS, ID = 1mA
rDS(on) VGS = 10V, ID = 200mA
Drain Cutoff Current
Forward Transconductance
Small–Signal Characteristics
ID(off)
gfs
VDS = 25V, VGS = 0
VDS = 10V, ID = 250mA
Input Capacitance
Switching Characteristics
Ciss VDS = 10V, VGS = 0, f = 1MHz
Turn–On Time
Turn–Off Time
ton ID = 200mA
toff ID = 200mA
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
60 90 –
V
– 0.01 10 nA
0.8 2.0 3.0 V
– 1.8 5.0 Ω
– – 0.5 µA
– 200 – mmhos
– – 60 pF
– 4 10 ns
– 4 10 ns
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