NTE2308 查看數據表（PDF） - NTE Electronics

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NTE2308

Silicon NPN Transistor High Voltage, High Current Switch

NTE Electronics 

NTE2308

Silicon NPN Transistor

High Voltage, High Current Switch

Features:

D High Breakdown Voltage

D Fast Switching Speed

D Wide ASO

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A

Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W

Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Note 1. Pules test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

ICBO

IEBO

hFE

VCB = 400V, IE = 0

VEB = 5V, IC = 0

VCE = 5V, IC = 1.6A

Current Gain–Bandwidth Product

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

fT

VCE(sat)

VBE(sat)

VCE = 5V, IC = 8A

VCE = 10V, IC = 1.6A

IC = 8A, IB = 1.6A

IC = 8A, IB = 1.6A

Output Capacitance

Cob VCB = 10V, f = 1MHz

Min Typ Max Unit

–

– 10 µA

–

– 10 µA

15 –

–

8

–

–

– 20 – MHz

–

– 1.0 V

–

– 1.5 V

– 160 – pF

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