NTE2308 查看數據表（PDF） - NTE Electronics

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NTE2308

Silicon NPN Transistor High Voltage, High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector–Emitter Sustaining Voltage

Turn–On Time

Storage Time

Fall Time

V(BR)CBO IC = 1mA, IE = 0

V(BR)CBO IC = 10mA, RBE = ∞

V(BR)EBO IE = 1mA, IC = 0

VCEO(sus) IC = 12A, IB = 2.4A, L = 50µH

VCEX(sus) IC = 12A, IB1 = 2.4A, L= 200µH,

IB2 = –2.4A, Clamped

IC = 3A, IB1 = 0.6A, L= 200µH,

IB2 = –0.6A, Clamped

ton

VCC = 200V, IC = 10A, IB1 = 2A,

tstg

IB2 = –2A, RL = 20Ω

tf

500 –

400 –

7

–

400 –

400 –

450 –

–

–

–

–

–

–

–

V

–

V

–

V

–

V

–

V

–

V

1.0 µs

2.5 µs

1.0 µs

.190 (4.82)

.615 (15.62)

.787

(20.0)

C

.591

(15.02)

.126

(3.22)

Dia

.787

(20.0)

B

C

E

.215 (5.47)

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