NTE270 查看數據表（PDF） - NTE Electronics

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NTE270

Silicon Complementary Transistors Darlington Power Amp, Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 2)

DC Current Gain

hFE

Collector–Emitter Saturation Voltage VCE(sat)

Base–Emitter Saturation Voltage

VBE(sat)

Switching Characteristics (Resistive Load)

IC = 5A, VCE = 4V

IC = 10A, VCE = 4V

IC = 5A, IB = 10mA

IC = 10A, IB = 40mA

IC = 10A, IB = 40mA

1000 – –

500 – –

– – 2.0 V

– – 3.0 V

– – 3.5 V

Delay Time

Rise Time

Storage Time

Fall Time

td

VCC = 30V, IC = 5A,

– 0.15 – µs

tr

IB = 20mA, Duty Cycle ≤ 2%,

IB1 = IB2, RC & RB Varied,

–

0.55

–

µs

ts

TJ = +25°C

– 2.5 – µs

tf

– 2.5 – µs

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.

NTE270

C

B

NTE271

C

B

E

E

.600

(15.24)

.060 (1.52)

.173 (4.4)

C

.156

(3.96)

Dia.

BCE

.550

(13.97) .430

(10.92)

.500

(12.7)

Min

.055 (1.4)

.216 (5.45)

.015 (0.39)

NOTE: Dotted line indicates that

case may have square corners

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