NTE2580 查看數據表（PDF） - NTE Electronics

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NTE2580

Silicon NPN Transistor High Voltage, High Current Switch

NTE Electronics 

NTE2580

Silicon NPN Transistor

High Voltage, High Current Switch

Features:

D High Breakdown Voltage, High Reliability

D Fast Switching Speed

D Wide ASO Range

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V

Collector Current, IC

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A

Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A

Collector Power Dissipation, PC

TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W

TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Note 1. Pulse Test: Pulsed Width ≤ 300µs, Duty Cycle ≤ 10%.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain–Bandwidth Product

Output Capacitance

Collector Emitter Saturation Voltage

ICBO

IEBO

hFE

fT

Cob

VCE(sat)

VCB = 400V, IE = 0

VEB = 5V, IC = 0

VCE = 5V, IC = 800mA

VCE = 5V, IC = 4A

VCE = 5V, IC = 10mA

VCE = 10V, IC = 800mA

VCB = 10V, f = 1MHz

IC = 4A, IB = 800mA

Min Typ Max Unit

– – 10 µA

– – 10 µA

20 – 50

10 – –

10 – –

– 20 – MHz

– 80 – pF

– – 0.8 V

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