MUR20040CT 查看數據表（PDF） - GeneSiC Semiconductor, Inc.

零件编号

产品描述 (功能)

生产厂家

MUR20040CT

Silicon Super Fast Recovery Diode

GeneSiC Semiconductor, Inc. 

Silicon Super Fast

Recovery Diode

Features

• High Surge Capability

• Types from 400 to 600 V VRRM

• Not ESD Sensitive

MUR20040CT thru MUR20060CTR

VRRM = 400 V - 600 V

IF(AV) = 200 A

Twin Tower Package

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Parameter

Symbol

Conditions

MUR20040CT (R)

MUR20060CT (R)

Repetitive peak reverse voltage

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

VRRM

VRMS

VDC

Tj

Tstg

400

280

400

-55 to 150

-55 to 150

600

420

600

-55 to 150

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

MUR20040CT (R)

MUR20060CT (R)

Average forward current (per pkg)

Peak forward surge current (per

leg)

Maximum instantaneous forward

voltage (per leg)

Maximum reverse current at rated

DC blocking voltage (per leg)

Maximum reverse recovery time

(per leg)

Thermal characteristics

Maximum thermal resistance,

junction - case (per leg)

IF(AV)

TC = 140 °C

IFSM tp = 8.3 ms, half sine

VF IFM = 100 A, Tj = 25 °C

IR

Tj = 25 °C

Tj = 125 °C

Trr

IF=0.5 A, IR=1.0 A,

IRR= 0.25 A

RΘJC

200

2000

1.3

25

3

90

0.45

200

2000

1.7

25

3

110

0.45

Unit

V

V

V

°C

°C

Unit

A

A

V

μA

mA

nS

°C/W

www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/

1

Share Link: