1SS355 查看數據表（PDF） - Semtech Electronics LTD.
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1SS355 Datasheet PDF : 4 Pages
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1SS355
SILICON EPITAXIAL PLANAR SWITCHING DIODES
FEATURES
• Small plastic package suitable
for surface mounted design
• High reliability with high surge
current handling capability
APPLICATIONS
• High speed switching
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Mean Rectifying Current
Peak Forward Current
Surge Current (1 s)
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VRM
90
V
VR
80
V
IO
100
mA
IFM
225
mA
Isurge
500
mA
Tj
125
OC
Tstg
- 55 to + 125
OC
Electrical Characteristics (Ta = 25 OC)
Parameter
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 80 V
Capacitance between Terminals
at VR = 0.5 V, f = 1 MHz
Reverse Recovery Time
at VR = 6 V, IF = 10 mA, RL = 100 Ω
Symbol
Max.
Unit
VF
1.2
V
IR
0.1
µA
CT
3
pF
trr
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
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