2N5551 查看數據表（PDF） - Motorola => Freescale
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2N5551 Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5550/D
Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
2N5550 2N5551
140
160
160
180
6.0
600
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N5550
2N5551
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 )
2N5550
2N5551
Emitter – Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
2N5550
2N5551
2N5550
2N5551
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
2N5550
2N5551*
*Motorola Preferred Device
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
140
160
V(BR)CBO
160
180
V(BR)EBO
6.0
ICBO
—
—
—
—
IEBO
—
Max
Unit
Vdc
—
—
Vdc
—
—
—
Vdc
100
nAdc
50
100
µAdc
50
50
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996
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