2N5551 查看數據表（PDF） - Motorola => Freescale

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2N5551

Amplifier Transistors

Motorola => Freescale 

2N5550 2N5551

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

2N5550

2N5551

hFE

—

60

—

80

—

(IC = 10 mAdc, VCE = 5.0 Vdc)

2N5550

2N5551

60

250

80

250

(IC = 50 mAdc, VCE = 5.0 Vdc)

Collector – Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

Base – Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

Noise Figure

(IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ,

f = 1.0 kHz)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

2N5550

2N5551

Both Types

2N5550

2N5551

Both Types

2N5550

2N5551

2N5550

2N5551

2N5550

2N5551

20

30

VCE(sat)

—

—

—

VBE(sat)

—

—

—

fT

100

Cobo

—

Cibo

—

—

hfe

50

NF

—

—

—

—

Vdc

0.15

0.25

0.20

Vdc

1.0

1.2

1.0

300

MHz

6.0

pF

pF

30

20

200

—

dB

10

8.0

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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