AO4800B 查看數據表（PDF） - Unspecified
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AO4800B Datasheet PDF : 6 Pages
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AO4800B
30V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=15V
ID=6.9A
4
3
1000
800
Ciss
600
2
1
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
400
Coss
200
0
Crss
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
TA=25°C
10.0
TA=150°C
TA=100°C
TA=125°C
1.0
1
10
100
1000
Time in avalanche, tA (µs)
Figure 9: Single Pulse Avalanche capability (Note C)
100.0
10.0
1.0
RDS(ON)
limited
10µs
100µs
1ms
10ms
0.1
DC
TJ(Max)=150°C
10s
TA=25°C
0.0
0.01
0.1
1
10
100
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
1000
TA=25°C
100
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
1000
4/6
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