BC859(2008) 查看數據表（PDF） - Infineon Technologies

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BC859
(Rev.:2008)

PNP Silicon AF Transistor

Infineon Technologies 

BC856...-BC860...

Maximum Ratings

Parameter

Collector-emitter voltage

BC856...

BC857..., BC860...

BC858..., BC859...

Symbol

VCEO

Value

65

45

30

Collector-base voltage

BC856...

BC857..., BC860...

BC858..., BC859...

Emitter-base voltage

Collector current

Peak collector current, tp ≤ 10 ms

Total power dissipation

TS ≤ 71 °C, BC856-BC860

TS ≤ 128 °C, BC857BF-BC858BF

TS ≤ 135 °C, BC857BL3, BC860BL3

TS ≤ 124 °C, BC856W-BC860W

Junction temperature

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point1)

BC856-BC860

BC857BF-BC858BF

BC857BL3, BC858BL3

BC856W-BC860W

VCBO

VEBO

IC

ICM

Ptot

Tj

Tstg

Symbol

RthJS

80

50

30

5

100

200

330

250

250

250

150

-65 ... 150

Value

≤ 240

≤ 90

≤ 60

≤ 105

1For calculation of RthJA please refer to Application Note Thermal Resistance

Unit

V

mA

mW

°C

Unit

K/W

3

2008-04-29

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