2N6386 查看數據表（PDF） - Inchange Semiconductor
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2N6386 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6386 2N6387 2N6388
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6386
2N6387
2N6388
IC=0.2A, IB=0
VCEsat-1
Collector-emitter
saturation voltage
2N6386
IC=3A ,IB=6mA
2N6387/6388 IC=5A ,IB=10mA
VCEsat-2
Collector-emitter
saturation voltage
2N6386
IC=8A ,IB=80mA
2N6387/6388 IC=10A ,IB=100mA
VBE-1
Base-emitter
on voltage
2N6386
IC=3A ; VCE=3V
2N6387/6388 IC=5A ; VCE=3V
VBE-2
Base-emitter
on voltage
ICBO
Collector
cut-off current
ICEO
Collector
cut-off current
2N6386
IC=8A ; VCE=3V
2N6387/6388
2N6386
2N6387
2N6388
2N6386
IC=10A ; VCE=3V
VCB=40V, VBE=-1.5V
TC=125℃
VCB=60V, VBE=-1.5V
TC=125℃
VCB=80V, VBE=-1.5V
TC=125℃
VCE=40V, IB=0
2N6387
VCE=60V, IB=0
2N6388
VCE=80V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
2N6386
IC=3A ; VCE=3V
2N6387/6388 IC=5A ; VCE=3V
hFE-2
DC current gain
2N6386
IC=8A ; VCE=3V
2N6387/6388 IC=10A ; VCE=3V
Cob
Output capacitance
IE=0 ; VCB=10V,f=0.1MHz
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
2
MIN TYP. MAX UNIT
40
60
V
80
2.0
V
3.0
V
2.8
V
4.5
V
0.3
3.0
0.3
3.0
mA
0.3
3.0
1.0
mA
1000
5.0
mA
20000
100
200
pF
VALUE
1.92
UNIT
℃/W
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