KT815A 查看數據表（PDF） - Inchange Semiconductor
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KT815A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KT815A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 100μA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 100μA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 50mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 500mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 5V
Switching times
tf
Fall Time
toff
Turn-Off Time
tstg
Storage Time
IC= 500mA ,RL=24Ω,
IB1= IB2= 50m A,VCE= 12V
MIN TYP. MAX UNIT
60
V
40
V
5
V
0.6
V
1.2
V
10 μA
10 μA
40
275
20
60
MHz
0.1
μs
0.5
μs
0.7
μs
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