BC546 查看數據表（PDF） - Continental Device India Limited
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BC546 Datasheet PDF : 5 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
BC546, A, B, C
BC547, A. B, C
BC548, A. B, C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Emitter Voltage
VCES
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Collector Current Peak
ICM
Base Current Peak
IBM
Emitter Current Peak
IEM
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Storage Temperature
Tstg
Junction Temperature
Tj
BC546
65
80
80
6
BC547
45
50
50
6
100
200
200
200
500
4.0
- 65 to +150
150
BC548
30
30
30
5
THERMAL RESISTANCE
Junction to Ambient in free air
Rth (j-a)
250
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Base Voltage
VCBO
IC=10µA, IE=0
Emitter Base Voltage
VEBO
IE=10µA, IC=0
Collector Cut Off Current
ICBO
VCB=30V, IE=0 ALL
VCB=30V, IE=0, Tj=150ºC ALL
Collector Cut Off Current
ICES
VCE=80V, VBE=0
VCE=50V, VBE=0
VCE=30V, VBE=0
VCE=80V, VBE=0, Tj=125ºC
VCE=50V, VBE=0, Tj=125ºC
VCE=30V, VBE=0, Tj=125ºC
BC546
>65
>80
>6.0
<15
<4.0
BC547
>45
>50
>6.0
<50
<5.0
<15
<4.0
BC548
>30
>30
>5.0
<15
<4.0
UNITS
V
V
V
V
mA
mA
mA
mA
mW
mW/ºC
ºC
ºC
ºC/W
UNITS
V
V
V
nA
µA
nA
nA
nA
µA
µA
µA
BC546_548Rev_4 290606D
Continental Device India Limited
Data Sheet
Page 1 of 5
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