BC546 查看數據表（PDF） - Continental Device India Limited

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BC546

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited 

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

CB E

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

DC Current Gain

hFE

IC=10µA, VCE=5V

A

B

C

IC=2mA, VCE=5V

BC546

BC547/548

A

B

C

Collector Emitter Saturation Voltage VCE (sat)

Base Emitter Saturation Voltage

VBE (sat)

Base Emitter On Voltage

VBE (on)

IC=100mA, VCE=5V

A

B

C

IC=10mA, IB=0.5mA

IC=100mA, IB=5mA

IC=10mA, IB=0.5mA

IC=100mA, IB=5mA

IC=2mA, VCE=5V

IC=10mA, VCE=5V

SMALL SIGNAL CHARACTERISTICS

DESCRIPTION

SYMBOL

Transistors Frequency

fT

Collector Output Capacitance

Ccbo

Emitter Input Capacitance

Cib

Noise Figure

NF

Small Signal Current Gain

hfe

Input Impedance

hie

Voltage Feedback Ratio

hre

Out Put Admittance

hoe

TEST CONDITION

IC=10mA, VCE=5V, f=100MHz

VCB=10V, f=1MHz

VEB=0.5V, f=1MHz

IC=0.2mA, VCE=5V, RS=1 kΩ,

f=1KHz, B=200Hz

IC=2mA, VCE=5V, f=1KHz

A

B

C

IC=2mA, VCE=5V, f=1KHz

A

B

C

IC=2mA, VCE=5V, f=1KHz

A

B

C

IC=2mA, VCE=5V, f=1KHz

A

B

C

BC546_548Rev_4 290606D

Continental Device India Limited

Data Sheet

MIN

110

110

110

200

420

0.55

MIN

1.6

3.2

6.0

BC546, A, B, C

BC547, A. B, C

BC548, A. B, C

TO-92

Plastic Package

For Lead Free Parts, Device

Part # will be Prefixed with

"T"

TYP

90

150

270

MAX UNITS

450

800

220

450

800

120

200

400

0.25

V

0.60

V

0.7

V

0.9

V

0.70

V

0.77

V

TYP

300

9.0

MAX

4.5

10

UNITS

MHz

pF

pF

dB

220

330

600

4.5

kΩ

8.5

kΩ

15

kΩ

1.5

x10-4

2.0

x10-4

3.0

x10-4

30

umhos

60

umhos

110 umhos

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