SM3116NSUC-TUG 查看數據表（PDF） - Unspecified
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SM3116NSUC-TUG Datasheet PDF : 10 Pages
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SM3116NSUC
®
Electrical
Characteristics
(Cont.)
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
Diode Characteristics
VSD c Diode Forward Voltage
ISD=20A, VGS=0V
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics d
IDS=40A, dlSD/dt=100A/µs
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VD S=15V,
Frequency=1.0MHz
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Qg Total Gate Charge
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS =4.5V,
IDS=40A
VDS=15V, VGS =10V,
IDS=40A
Qgd Gate-Drain Charge
Note c ：Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note d ：Guaranteed by design, not subject to production testing.
SM3116NSUC
Min. Typ. Max.
- 0.8 1.1
-
26
-
-
15
-
-
11
-
-
9
-
- 2.5 -
- 1700 -
- 270 -
- 175 -
-
15 28
-
13 24
-
39 71
-
10 32
-
14
-
-
28 39
-
3
-
- 3.7 -
- 7.9 -
Unit
V
ns
nC
Ω
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
3
Rev. A.1 - September, 2012
www.sinopowersemi.com
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