BUW13F 查看數據表（PDF） - Philips Electronics
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BUW13F Datasheet PDF : 16 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW13F; BUW13AF
handbook, full pagewidth
102
IC ICM max
(A)
IC max
10
δ = 0.01
1
I
10−1
10−2
MGB929
tp =
20 µs
50 µs
II
100 µs
200 µs
500 µs
1 ms
2 ms
5 ms
10 ms
20 ms
DC
10−3
BUW13F
BUW13AF
10−4
1
10
102
103 VCE (V) 104
Tmb = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
(1) Ptot max and Ptot peak max lines.
(2) Second breakdown limits (independent of temperature).
Fig.4 Forward bias SOAR.
1997 Aug 13
6
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