Table 13
Typ. output characteristics TC=25 °C
600V CoolMOS" E6 Power Transistor
IPx60R520E6
Electrical characteristics diagrams
Typ. output characteristics Tj=125 °C
ID=f(VDS); Tj=25 °C; parameter: VGS
Table 14
Typ. drain-source on-state resistance
ID=f(VDS); Tj=125 °C; parameter: VGS
Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=2.8 A; VGS=10 V
Final Data Sheet
10
Rev. 2.02, 20104-0142-0190