6R520E6 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

6R520E6

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

Table 13

Typ. output characteristics TC=25 °C

600V CoolMOS™ E6 Power Transistor

IPx60R520E6

Electrical characteristics diagrams

Typ. output characteristics Tj=125 °C

ID=f(VDS); Tj=25 °C; parameter: VGS

Table 14

Typ. drain-source on-state resistance

ID=f(VDS); Tj=125 °C; parameter: VGS

Drain-source on-state resistance

RDS(on)=f(ID); Tj=125 °C; parameter: VGS

RDS(on)=f(Tj); ID=2.8 A; VGS=10 V

Final Data Sheet

10

Rev. 2.0, 2010-04-09

Share Link: