6R520E6 查看數據表（PDF） - Infineon Technologies

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6R520E6

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

600V CoolMOS™ E6 Power Transistor

IPx60R520E6

Maximum ratings

2

Maximum ratings

at Tj = 25 °C, unless otherwise specified.

Table 2 Maximum ratings

Parameter

Symbol

Continuous drain current1)

Pulsed drain current2)

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, repetitive

MOSFET dv/dt ruggedness

Gate source voltage

ID

ID,pulse

EAS

EAR

IAR

dv/dt

VGS

Power dissipation for

TO-220

Power dissipation for

TO-220 FullPAK

Operating and storage temperature

Mounting torque

TO-220

Mounting torque

TO-220 FullPAK

Continuous diode forward current

Diode pulse current2)

Reverse diode dv/dt3)

Ptot

Ptot

Tj,Tstg

IS

IS,pulse

dv/dt

Min.

-

-

-

Values

Typ. Max.

-

8.1

5.1

-

22

-

153

-

-

-

-

-

-

-20 -

-30

-

-

0.23

1.4

50

20

30

66

-

-

29

-55 -

150

-

-

60

50

-

-

7

-

-

22

-

-

15

Maximum diode commutation

dif/dt

500

speed3)

1) Limited by Tj,max. Maximum duty cycle D=0.75

2) Pulse width tp limited by Tj,max

3) Identical low side and high side switch with identical RG

Unit Note / Test Condition

A

A

mJ

A

V/ns

V

W

TC= 25 °C

TC= 100°C

TC=25 °C

ID=1.4 A,VDD=50 V

(see table 21)

ID=1.3 A,VDD=50 V

VDS=0...480 V

static

AC (f>1 Hz)

TC=25 °C

W TC=25 °C

°C

Ncm M3 and M3.5 screws

M2.5 screws

A

A

V/ns

A/µs

TC=25 °C

TC=25 °C

VDS=0...400 V,ISD " ID,

Tj=25 °C

(see table 22)

Final Data Sheet

4

Rev. 2.0, 2010-04-09

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