6R520E6 查看數據表（PDF） - Infineon Technologies

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6R520E6

Metal Oxide Semiconductor Field Effect Transistor

Infineon Technologies 

3

Thermal characteristics

600V CoolMOS™ E6 Power Transistor

IPx60R520E6

Thermal characteristics

Table 3 Thermal characteristics TO-220 (IPP60R520E6)

Parameter

Symbol

Values

Min.

Typ.

Thermal resistance, junction - case RthJC

-

-

Thermal resistance, junction -

RthJA

-

-

ambient

Soldering temperature,

Tsold

-

-

wavesoldering only allowed at

leads

Max.

1.9

62

260

Table 4 Thermal characteristics TO-220FullPAK (IPA60R520E6)

Parameter

Symbol

Values

Min.

Typ.

Max.

Thermal resistance, junction - case RthJC

-

-

4.3

Thermal resistance, junction -

RthJA

-

-

80

ambient

Soldering temperature,

Tsold

-

-

260

wavesoldering only allowed at

leads

Unit Note /

Test Condition

°C/W

leaded

°C 1.6 mm (0.063 in.)

from case for 10 s

Unit Note /

Test Condition

°C/W

leaded

°C 1.6 mm (0.063 in.)

from case for 10 s

Final Data Sheet

5

Rev. 2.0, 2010-04-09

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