MMBTA43 查看數據表（PDF） - Diotec Semiconductor Germany

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MMBTA43

Surface mount High Voltage Transistors

Diotec Semiconductor Germany  

Characteristics (Tj = 25°C)

DC current gain – Kollektor-Basis-Stromverhältnis

VCE = 10 V, IC = 1 mA

VCE = 10 V, IC = 10 mA

VCE = 10 V, IC = 30 mA

Gain-Bandwidth Product – Transitfrequenz

VCE = 10 V, IC = 20 mA, f = 100 MHz

Collector-Base capacitance – Kollektor-Basis-Kapazität

VCB = 20 V, IE =ie = 0, f = 1 MHz

MMBTA42

MMBTA43

Thermal resistance junction – ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

Marking - Stempelung

MMBTA42 / MMBTA43

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

hFE

25

–

–

hFE

40

–

–

hFE

40

–

–

fT

50 MHz

–

–

CCB0

–

CCB0

–

–

3 pF

–

4 pF

RthA

< 420 K/W 1)

MMBTA92, MMBTA93

MMBTA42 = 1D

MMBTA43 = 1E

120

[%]

100

80

60

40

20

Ptot

0

0 TA 50

100

150 [°C]

Power dissipation versus ambient temperature 1)

Verlustleistung in Abh. von d. Umgebungstemp.1)

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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