NX25F011A 查看數據表（PDF） - NexFlash -> Winbond Electronics

零件编号

产品描述 (功能)

生产厂家

NX25F011A

1M-BIT AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE

NexFlash -> Winbond Electronics 

NX25F011A

NX25F041A

SERIAL SRAM AND PROGRAM BUFFER

COMMANDS

Write to SRAM Command

The Write to SRAM command (82H) provides access to

the 264-Byte SRAM independently of any Flash memory

array operation. The command is similar to the Write to

Sector command sequence except that the sector

address field S[15:0] is replaced by all 0 bits. When CS

is asserted high to complete the command, the contents

Write to

SRAM

Command

16 Clocks

Byte

Address*

SI

82H

0000H

B[15:0]

SO

*The byte address only uses bits [8:0]

1

of the SRAM will be maintained until overwritten via

another command or the power is removed. Using the

2 Write to SRAM command, data can be loaded in prepara-

tion of writing to a sector in memory and then transferred

to a selected sector using the Transfer SRAM to Sector

command.

3

Write Sector Data

8 Clocks

First Byte - Last Byte

00H

4

5

6

Read from SRAM

The Read from SRAM command (81H) provides access

to the 264-Byte SRAM independent of any Flash memory

array operations. The command is similar to the Read

Read from

SRAM

Command

16 Clocks

Byte

Address*

16 Clocks

SI

81H

0000H

B[15:0]

0000H

SO

*The byte address only uses bits [8:0]

7 from Sector command except for the sector address field

S[15:0] which is replaced with all 0 bits.

8

9

RB[15:0]

First Byte - Last Byte

Read/Busy

Read SRAM Data

Status

10

11

12

NexFlash Technologies, Inc.

15

PRELIMINARY NXSF014B-0699

06/11/99

Share Link: