BD243C 查看數據表（PDF） - Inchange Semiconductor
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BD243C Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD243/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD243
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD243A
BD243B
IC= 30mA ;IB=0
BD243C
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1A
VBE(on) Base-Emitter On Voltage
IC= 6A ; VCE= 4V
BD243
VCB= 55V; VBE= 0
ICBO
Collector
Cutoff Current
BD243A
BD243B
VCB= 70V; VBE= 0
VCB= 90V; VBE= 0
BD243C
VCB= 110V; VBE= 0
ICEO
Collector
Cutoff Current
BD243/A
VCE= 30V;IB= 0
BD243B/C VCE= 60V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 4V
hFE-2
DC Current Gain
IC= 3A ; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V, ftest= 1.0MHz
MIN MAX UNIT
45
60
V
80
100
1.5
V
2.0
V
0.4
mA
0.7
mA
1.0
mA
30
15
3.0
MHz
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