BD243C 查看數據表（PDF） - Bourns, Inc

零件编号

产品描述 (功能)

生产厂家

BD243C

SILICON NPN POWER TRANSISTORS

Bourns, Inc 

BD243, BD243A, BD243B, BD243C

NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

1000

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS633AH

VCE = 4 V

TC = 25°C

tp = 300 µs, duty cycle < 2%

100

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

TCS633AE

10

IC = 300 mA

IC = 1 A

IC = 3 A

IC = 6 A

1·0

10

0·1

1·0

0·1

OBSOLETE 1·0

IC - Collector Current - A

Figure 1.

0·01

10

0·001

0·01

0·1

1·0

IB - Base Current - A

Figure 2.

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

TCS633AF

1·2

VCE = 4 V

TC = 25°C

1·1

1·0

0·9

0·8

0·7

0·6

0·1

1·0

10

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

JUNE 1973 - REVISED NOVEMBER 2012

Specifications are subject to change without notice.

10

3

Share Link: