IRF530 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
IRF530 Datasheet PDF : 7 Pages
| |||
IRF530
Product Preview
TMOS E−FET.™
Power Field Effect
Transistor
N−Channel Enhancement−Mode Silicon
Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor controls.
These devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating area are critical and offer
additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
14 AMPERES, 100 VOLTS
RDS(on) = 0.140 W
CASE 221A−09
TO-220AB
D
®
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage — Continuous
Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS)
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 mS)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Operating and Storage Temperature Range
TJ, Tstg
UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Drain−to−Source Avalanche Energy — STARTING TJ = 25°C
EAS
(VDD = 75 V, VGS = 10 V, PEAK IL = 14 A, L = 1.0 mH, RG = 25 W)
THERMAL CHARACTERISTICS
Thermal Resistance — Junction−to−Case°
Thermal Resistance — Junction−to−Ambient°
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
E−FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves
the right to change or discontinue this product without notice.
RθJC
RθJA
TL
G
S
Value
100
100
± 20
± 25
14
10
49
78
0.63
−55 to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
mJ
98
1.60
°C/W
62.5
275
°C
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
IRF530/D
Share Link: 