IRF530 查看數據表（PDF） - ON Semiconductor

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IRF530

TMOS POWER FET 14 AMPERES, 100 VOLTS RDS(on) = 0.140 Ω

ON Semiconductor 

IRF530

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 100 Vdc, VGS = 0 Vdc)

(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mA)

Threshold Temperature Coefficient (Negative)

Cpk ≥ 2.0(3)

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 8.0 Adc)

Cpk ≥ 2.0(3)

Drain−to−Source On−Voltage

(VGS = 10 Vdc, ID = 14 Adc)

(VGS = 10 Vdc, ID = 8.0 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS(2)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

(VDS = 36 Vdc, ID = 8.0 Adc,

VGS = 10 Vdc, RG = 15 Ω)

Fall Time

Gate Charge

(VDS = 80 Vdc, ID = 14 Adc,

VGS = 10 Vdc)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 14 Adc, VGS = 0 Vdc)

(IS = 14 Adc, VGS = 0 Vdc, TJ = 125°C)

Reverse Recovery Time

(IS = 14 Adc,

dIS/dt = 100 A/μS)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

Internal Source Inductance

(Measured from screw on tab to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 μS, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Ť Ť (3) Reflects typical values.

Cpk +

Max limit – Typ

3 sigma

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

trr

ta

tb

QRR

Ld

Ls

http://onsemi.com

2

Min

Typ

Max

Unit

100

—

—

112

Vdc

—

—

V/°C

mAdc

—

—

10

—

—

100

—

—

100

nAdc

Vdc

2.0

2.9

4.0

—

6.2

—

mV/°C

Ohms

—

0.098 0.140

Vdc

—

—

—

—

—

—

4.0

7.4

—

Mhos

—

700

800

pF

—

200

500

—

65

150

—

9.0

30

ns

—

47

75

—

33

40

—

34

45

—

26

40

nC

—

5.0

—

—

13

—

—

11

—

Vdc

—

0.92

1.5

—

0.80

—

—

103

—

nS

—

78

—

—

25

—

—

0.46

—

mC

nH

—

3.5

—

—

7.5

—

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