IRF530 查看數據表（PDF） - ON Semiconductor
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IRF530 Datasheet PDF : 7 Pages
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IRF530
TYPICAL ELECTRICAL CHARACTERISTICS
30
VGS = 10 V
25
20
9V
8V
TJ = 25°C
7V
30
VDS ≥ 10 V
25
20
TJ = −55°C
25°C
100°C
15
6V
10
5
5V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
15
10
5
0
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.20
0.18 VGS = 10 V
0.16
TJ = 100°C
0.14
0.12
25°C
0.10
0.08
0.06
− 55°C
0.04
0.02
0.00
0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.14
TJ = 25°C
0.13
0.12
0.11
VGS = 10 V
0.10
15 V
0.09
0.08
0.07
0.06
0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 3
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.0
1.8
VGS = 10 V
ID = 8 A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−50 −25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1000
VGS = 0 V
100
10
TJ = 125°C
100°C
1
0 10 20 30 40 50 60 70 80 90 100 1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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